Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH 500V 12A ISOPLUS220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 140W (Tc) N-Channel - 500V 12A (Tc) 400 mOhm @ 6.5A, 10V 4V @ 2.5mA 120nC @ 10V 2800pF @ 25V 10V ±20V
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1,591
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IXYS MOSFET N-CH 500V 12A ISOPLUS220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 140W (Tc) N-Channel - 500V 12A (Tc) 400 mOhm @ 6.5A, 10V 4V @ 2.5mA 120nC @ 10V 2800pF @ 25V 10V ±20V
IXFH13N50
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2,385
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IXYS MOSFET N-CH 500V 13A TO-247AD HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 180W (Tc) N-Channel - 500V 13A (Tc) 400 mOhm @ 6.5A, 10V 4V @ 2.5mA 120nC @ 10V 2800pF @ 25V 10V ±20V
TK13A50D(STA4,Q,M)
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3,007
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 13A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 500V 13A (Ta) 400 mOhm @ 6.5A, 10V 4V @ 1mA 38nC @ 10V 1800pF @ 25V 10V ±30V