Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,164
In-stock
Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 92W (Tc) N-Channel 600V 18A (Tc) 125 mOhm @ 7.8A, 10V 4.5V @ 390µA 36nC @ 10V 1503pF @ 400V 10V ±20V
IPL60R125C7AUMA1
RFQ
VIEW
RFQ
3,782
In-stock
Infineon Technologies MOSFET N-CH 600V 17A 4VSON CoolMOS™ C7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 103W (Tc) N-Channel 600V 17A (Tc) 125 mOhm @ 7.8A, 10V 4V @ 390µA 34nC @ 10V 1500pF @ 400V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,538
In-stock
Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 92W (Tc) N-Channel 600V 18A (Tc) 125 mOhm @ 7.8A, 10V 4.5V @ 390µA 36nC @ 10V 1503pF @ 400V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,761
In-stock
Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 32W (Tc) N-Channel 600V 11A (Tc) 125 mOhm @ 7.8A, 10V 4.5V @ 390µA 36nC @ 10V 1503pF @ 400V 10V ±20V