Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT37F50S
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3,893
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Microsemi Corporation MOSFET N-CH 500V 37A D3PAK POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 520W (Tc) N-Channel - 500V 37A (Tc) 150 mOhm @ 18A, 10V 5V @ 1mA 145nC @ 10V 5710pF @ 25V 10V ±30V
IXKR25N80C
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1,249
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IXYS MOSFET N-CH 800V 25A ISOPLUS247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 355nC @ 10V - 10V ±20V
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1,927
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IXYS MOSFET N-CH 800V 25A ISOPLUS220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 180nC @ 10V 4600pF @ 25V 10V ±20V
APT37F50B
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3,753
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Microsemi Corporation MOSFET N-CH 500V 37A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 520W (Tc) N-Channel - 500V 37A (Tc) 150 mOhm @ 18A, 10V 5V @ 1mA 145nC @ 10V 5710pF @ 25V 10V ±30V