Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT56F60B2
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Microsemi Corporation MOSFET N-CH 600V 60A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 600V 60A (Tc) 110 mOhm @ 28A, 10V 5V @ 2.5mA 280nC @ 10V 11300pF @ 25V 10V ±30V
APT39M60J
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2,757
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Microsemi Corporation MOSFET N-CH 600V 42A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 480W (Tc) N-Channel - 600V 42A (Tc) 110 mOhm @ 28A, 10V 5V @ 2.5mA 280nC @ 10V 11300pF @ 25V 10V ±30V
APT56F60L
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2,163
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Microsemi Corporation MOSFET N-CH 600V 60A TO-264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1040W (Tc) N-Channel - 600V 60A (Tc) 110 mOhm @ 28A, 10V 5V @ 2.5mA 280nC @ 10V 11300pF @ 25V 10V ±30V
APT39F60J
RFQ
VIEW
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706
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Microsemi Corporation MOSFET N-CH 600V 42A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 480W (Tc) N-Channel - 600V 42A (Tc) 110 mOhm @ 28A, 10V 5V @ 2.5mA 280nC @ 10V 11300pF @ 25V 10V ±30V