Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 75V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 75V 75A (Tc) 12.6 mOhm @ 48A, 10V 4V @ 250µA 130nC @ 10V 3270pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N CH 75V 62A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 120W (Tc) N-Channel - 75V 62A (Tc) 12.6 mOhm @ 48A, 10V 4V @ 250µA 130nC @ 10V 3270pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 75V 80A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 75V 75A (Tc) 12.6 mOhm @ 48A, 10V 4V @ 250µA 130nC @ 10V 3270pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 75V 62A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 120W (Tc) N-Channel - 75V 62A (Tc) 12.6 mOhm @ 48A, 10V 4V @ 250µA 130nC @ 10V 3270pF @ 25V 10V ±20V