- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,315
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,974
In-stock
|
IXYS | MOSFET N-CH 600V 5A D2-PAK | PolarHV™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 100W (Tc) | N-Channel | - | 600V | 5A (Tc) | 1.7 Ohm @ 2.5A, 10V | 5.5V @ 50µA | 14.2nC @ 10V | 750pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,682
In-stock
|
IXYS | MOSFET N-CH 600V 5A TO-220 | PolarHV™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | - | 600V | 5A (Tc) | 1.7 Ohm @ 2.5A, 10V | 5.5V @ 50µA | 14.2nC @ 10V | 750pF @ 25V | 10V | ±30V | |||
