Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK7P50D(T6RSS-Q)
RFQ
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RFQ
670
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 7A DPAK-3 π-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 100W (Tc) N-Channel - 500V 7A (Ta) 1.22 Ohm @ 3.5A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V
TK7A50D(STA4,Q,M)
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RFQ
2,538
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 7A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 500V 7A (Ta) 1.22 Ohm @ 3.5A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V