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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	GP1M010A080H	RFQ VIEW	PDF RFQ	3,649 In-stock	Global Power Technologies Group	MOSFET N-CH 800V 9.5A TO220		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	290W (Tc)	N-Channel	800V	9.5A (Tc)	1.05 Ohm @ 4.75A, 10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	10V	±30V
	GP1M010A080FH	RFQ VIEW	PDF RFQ	3,617 In-stock	Global Power Technologies Group	MOSFET N-CH 800V 9.5A TO220F		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F	48W (Tc)	N-Channel	800V	9.5A (Tc)	1.05 Ohm @ 4.75A, 10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	10V	±30V
	TSM10N80CI C0G	RFQ VIEW	PDF RFQ	3,417 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 9.5A ITO220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220	48W (Tc)	N-Channel	800V	9.5A (Tc)	1.05 Ohm @ 4.75A, 10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	10V	±30V
	TSM10N80CZ C0G	RFQ VIEW	PDF RFQ	3,153 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 9.5A TO220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	48W (Tc)	N-Channel	800V	9.5A (Tc)	1.05 Ohm @ 4.75A, 10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	10V	±30V

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