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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	SCT2H12NZGC11	RFQ VIEW	PDF RFQ	2,000 In-stock	Rohm Semiconductor	MOSFET N-CH 1700V 3.7A		-	Active	Tube	SiCFET (Silicon Carbide)	175°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM	35W (Tc)	N-Channel	1700V	3.7A (Tc)	1.5 Ohm @ 1.1A, 18V	4V @ 900µA	14nC @ 18V	184pF @ 800V	18V	+22V, -6V
	SCT2H12NYTB	RFQ VIEW	PDF RFQ	3,360 In-stock	Rohm Semiconductor	1700V 1.2 OHM 4A SIC FET		-	Active	Digi-Reel®	MOSFET (Metal Oxide)	175°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	44W (Tc)	N-Channel	1700V	4A (Tc)	1.5 Ohm @ 1.1A, 18V	4V @ 410µA	14nC @ 18V	184pF @ 800V	18V	+22V, -6V
	SCT2H12NYTB	RFQ VIEW	PDF RFQ	3,455 In-stock	Rohm Semiconductor	1700V 1.2 OHM 4A SIC FET		-	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	175°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	44W (Tc)	N-Channel	1700V	4A (Tc)	1.5 Ohm @ 1.1A, 18V	4V @ 410µA	14nC @ 18V	184pF @ 800V	18V	+22V, -6V
	SCT2H12NYTB	RFQ VIEW	PDF RFQ	1,787 In-stock	Rohm Semiconductor	1700V 1.2 OHM 4A SIC FET		-	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	175°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	44W (Tc)	N-Channel	1700V	4A (Tc)	1.5 Ohm @ 1.1A, 18V	4V @ 410µA	14nC @ 18V	184pF @ 800V	18V	+22V, -6V

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