- Manufacture :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,155
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
2,906
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
1,251
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | |||
|
VIEW |
3,250
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 22A TO247 | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 227W (Tc) | N-Channel | - | 600V | 22A (Tc) | 170 mOhm @ 11A, 10V | 3.5V @ 250µA | 55nC @ 10V | 2860pF @ 380V | 10V | ±20V | |||
|
VIEW |
2,923
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 22A TO220 | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 227W (Tc) | N-Channel | - | 600V | 22A (Tc) | 170 mOhm @ 11A, 10V | 3.5V @ 250µA | 55nC @ 10V | 2860pF @ 380V | 10V | ±20V | |||
