Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI4143DY-T1-GE3
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1,467
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Vishay Siliconix MOSFET P-CHANNEL 30V 25.3A 8SO TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6W (Tc) P-Channel - 30V 25.3A (Tc) 6.2 mOhm @ 12A, 10V 2.5V @ 250µA 167nC @ 10V 6630pF @ 15V 4.5V, 10V ±25V
SI4143DY-T1-GE3
RFQ
VIEW
RFQ
2,143
In-stock
Vishay Siliconix MOSFET P-CHANNEL 30V 25.3A 8SO TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6W (Tc) P-Channel - 30V 25.3A (Tc) 6.2 mOhm @ 12A, 10V 2.5V @ 250µA 167nC @ 10V 6630pF @ 15V 4.5V, 10V ±25V