Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHX18NQ20T,127
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RFQ
602
In-stock
NXP USA Inc. MOSFET N-CH 200V 8.2A TO220F TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 200V 8.2A (Tc) 180 mOhm @ 8A, 10V 4V @ 1mA 40nC @ 10V 1850pF @ 25V 10V ±20V
IRF640,127
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RFQ
3,274
In-stock
NXP USA Inc. MOSFET N-CH 200V 16A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 136W (Tc) N-Channel 200V 16A (Tc) 180 mOhm @ 8A, 10V 4V @ 1mA 63nC @ 10V 1850pF @ 25V 10V ±20V
RCX160N20
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VIEW
RFQ
884
In-stock
Rohm Semiconductor MOSFET N-CH 200V 16A TO220 - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 2.23W (Ta), 40W (Tc) N-Channel 200V 16A (Tc) 180 mOhm @ 8A, 10V 5.25V @ 1mA 26nC @ 10V 1370pF @ 25V 10V ±30V
RCJ160N20TL
RFQ
VIEW
RFQ
781
In-stock
Rohm Semiconductor MOSFET N-CH 200V 16A LPTS - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 1.56W (Ta), 40W (Tc) N-Channel 200V 16A (Tc) 180 mOhm @ 8A, 10V 5.25V @ 1mA 26nC @ 10V 1370pF @ 25V 10V ±30V