Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFZ44VSTRR
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Infineon Technologies MOSFET N-CH 60V 55A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 115W (Tc) N-Channel - 60V 55A (Tc) 16.5 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1812pF @ 25V 10V ±20V
IRFZ44VSTRL
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2,778
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Infineon Technologies MOSFET N-CH 60V 55A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 115W (Tc) N-Channel - 60V 55A (Tc) 16.5 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1812pF @ 25V 10V ±20V
IRFZ44VS
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2,969
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Infineon Technologies MOSFET N-CH 60V 55A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 115W (Tc) N-Channel - 60V 55A (Tc) 16.5 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1812pF @ 25V 10V ±20V
IRFZ44VPBF
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1,783
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Infineon Technologies MOSFET N-CH 60V 55A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 115W (Tc) N-Channel - 60V 55A (Tc) 16.5 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1812pF @ 25V 10V ±20V