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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,158
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 12V 7A 6WCSP6C | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 6-WCSPC (1.5x1.0) | 1.6W (Ta) | N-Channel | - | 12V | 7A (Ta) | 18 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | 600pF @ 6V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,660
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 12V 7A 6WCSP6C | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 6-WCSPC (1.5x1.0) | 1.6W (Ta) | N-Channel | - | 12V | 7A (Ta) | 18 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | 600pF @ 6V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,110
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 12V 7A 6WCSP6C | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 6-WCSPC (1.5x1.0) | 1.6W (Ta) | N-Channel | - | 12V | 7A (Ta) | 18 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | 600pF @ 6V | 1.5V, 4.5V | ±8V | |||
