Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCPF2250N80Z
RFQ
VIEW
RFQ
3,355
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 21.9W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V
FCU2250N80Z
RFQ
VIEW
RFQ
3,016
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A IPAK SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 39W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V
FCD2250N80Z
RFQ
VIEW
RFQ
1,677
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A TO252-3 SuperFET® II Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 39W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V
FCD2250N80Z
RFQ
VIEW
RFQ
3,091
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A TO252-3 SuperFET® II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 39W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V
FCD2250N80Z
RFQ
VIEW
RFQ
3,172
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A TO252-3 SuperFET® II Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 39W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V