Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW6N120K3
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2,864
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STMicroelectronics MOSFET N-CH 1200V 6A TO-247 SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel - 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V
STP6N120K3
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2,830
In-stock
STMicroelectronics MOSFET N-CH 1200V 6A TO-220 SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V
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RFQ
1,472
In-stock
IXYS POWER MOSFET TO-3 - Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-204AA 180W (Tc) N-Channel - 1000V 5A (Tc) 2.4 Ohm @ 2.5A, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
RJK6026DPE-00#J3
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3,015
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Renesas Electronics America MOSFET N-CH 600V 5A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 62.5W (Tc) N-Channel - 600V 5A (Ta) 2.4 Ohm @ 2.5A, 10V - 14nC @ 10V 440pF @ 25V 10V ±30V
STFW6N120K3
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RFQ
1,263
In-stock
STMicroelectronics MOSFET N-CH 1200V 3.8A TO-3PF SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 63W (Tc) N-Channel - 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V