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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FCH47N60NF	RFQ VIEW	PDF RFQ	1,895 In-stock	ON Semiconductor	MOSFET N-CH 600V 45.8A TO-247		SupreMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	368W (Tc)	N-Channel	-	600V	45.8A (Tc)	65 mOhm @ 23.5A, 10V	4V @ 250µA	157nC @ 10V	6120pF @ 100V	10V	±30V
	SIHG47N60AEL-GE3	RFQ VIEW	PDF RFQ	1,911 In-stock	Vishay Siliconix	MOSFET N-CHAN 600V		EL	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	379W (Tc)	N-Channel	-	600V	47A (Tc)	65 mOhm @ 23.5A, 10V	4V @ 250µA	222nC @ 10V	4600pF @ 100V	10V	±30V
	SIHG47N60AEL-GE3	RFQ VIEW	PDF RFQ	2,884 In-stock	Vishay Siliconix	MOSFET N-CHAN 600V		EL	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	379W (Tc)	N-Channel	-	600V	47A (Tc)	65 mOhm @ 23.5A, 10V	4V @ 250µA	222nC @ 10V	4600pF @ 100V	10V	±30V
	SIHG47N60AEL-GE3	RFQ VIEW	PDF RFQ	1,095 In-stock	Vishay Siliconix	MOSFET N-CHAN 600V		EL	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	379W (Tc)	N-Channel	-	600V	47A (Tc)	65 mOhm @ 23.5A, 10V	4V @ 250µA	222nC @ 10V	4600pF @ 100V	10V	±30V

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