- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,746
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 13A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 13A (Ta) | 500 mOhm @ 6.5A, 10V | 4V @ 1mA | 62nC @ 10V | 3100pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,072
In-stock
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STMicroelectronics | MOSFET N-CH 650V 13A I2SPAK | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 190W (Tc) | N-Channel | - | 650V | 13A (Tc) | 500 mOhm @ 6.5A, 10V | 4.5V @ 100µA | 89nC @ 10V | 2750pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,199
In-stock
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STMicroelectronics | MOSFET N-CH 650V 13A TO-220 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 650V | 13A (Tc) | 500 mOhm @ 6.5A, 10V | 4.5V @ 100µA | 89nC @ 10V | 2750pF @ 25V | 10V | ±30V | |||
