Package / Case :
Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK31E60X,S1X
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RFQ
1,091
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A TO-220 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65nC @ 10V 3000pF @ 300V 10V ±30V
TK31N60X,S1F
RFQ
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RFQ
1,680
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65nC @ 10V 3000pF @ 300V 10V ±30V