Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMN1032UCB4-7
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RFQ
1,410
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Diodes Incorporated MOSFET N-CH 12V 4.8A U-WLB1010-4 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLBGA U-WLB1010-4 900mW (Ta) N-Channel 12V 4.8A (Ta) 26 mOhm @ 1A, 4.5V 1.2V @ 250µA 4.5nC @ 4.5V 450pF @ 6V 1.8V, 4.5V ±8V
DMN1032UCB4-7
RFQ
VIEW
RFQ
2,355
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Diodes Incorporated MOSFET N-CH 12V 4.8A U-WLB1010-4 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLBGA U-WLB1010-4 900mW (Ta) N-Channel 12V 4.8A (Ta) 26 mOhm @ 1A, 4.5V 1.2V @ 250µA 4.5nC @ 4.5V 450pF @ 6V 1.8V, 4.5V ±8V
DMN1032UCB4-7
RFQ
VIEW
RFQ
3,737
In-stock
Diodes Incorporated MOSFET N-CH 12V 4.8A U-WLB1010-4 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLBGA U-WLB1010-4 900mW (Ta) N-Channel 12V 4.8A (Ta) 26 mOhm @ 1A, 4.5V 1.2V @ 250µA 4.5nC @ 4.5V 450pF @ 6V 1.8V, 4.5V ±8V