Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLMS1902TR
RFQ
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RFQ
2,240
In-stock
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 20V 3.2A (Ta) 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V 300pF @ 15V 2.7V, 4.5V ±12V
IRLMS1902TR
RFQ
VIEW
RFQ
2,410
In-stock
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 20V 3.2A (Ta) 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V 300pF @ 15V 2.7V, 4.5V ±12V
IRLMS1902TRPBF
RFQ
VIEW
RFQ
1,470
In-stock
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 20V 3.2A (Ta) 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V 300pF @ 15V 2.7V, 4.5V ±12V
IRLMS1902TRPBF
RFQ
VIEW
RFQ
3,137
In-stock
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 20V 3.2A (Ta) 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V 300pF @ 15V 2.7V, 4.5V ±12V
IRLMS1902TRPBF
RFQ
VIEW
RFQ
1,006
In-stock
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) N-Channel - 20V 3.2A (Ta) 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V 300pF @ 15V 2.7V, 4.5V ±12V