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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Transphorm | MOSFET N-CH 650V 35A TO247 | Automotive, AEC-Q101 | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 125W (Tc) | N-Channel | 650V | 35A (Tc) | 62 mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | 2200pF @ 400V | - | ±18V | |||
