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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IPZ65R065C7XKSA1	RFQ VIEW	PDF RFQ	3,186 In-stock	Infineon Technologies	MOSFET N-CH 650V TO247-4		CoolMOS™ C7	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	PG-TO247-4	171W (Tc)	N-Channel	-	650V	33A (Tc)	65 mOhm @ 17.1A, 10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	10V	±20V
	IPP65R065C7XKSA1	RFQ VIEW	PDF RFQ	3,629 In-stock	Infineon Technologies	MOSFET N-CH 650V TO-220-3		CoolMOS™ C7	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	PG-TO-220-3	171W (Tc)	N-Channel	-	650V	33A (Tc)	65 mOhm @ 17.1A, 10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	10V	±20V
	IPA65R065C7XKSA1	RFQ VIEW	PDF RFQ	2,664 In-stock	Infineon Technologies	MOSFET N-CH 650V TO220-3		CoolMOS™ C7	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	PG-TO220-FP	34W (Tc)	N-Channel	-	650V	15A (Tc)	65 mOhm @ 17.1A, 10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	10V	±20V
	IPW65R065C7XKSA1	RFQ VIEW	PDF RFQ	1,095 In-stock	Infineon Technologies	MOSFET N-CH 650V TO-247-3		CoolMOS™ C7	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3	171W (Tc)	N-Channel	-	650V	33A (Tc)	65 mOhm @ 17.1A, 10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	10V	±20V

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