Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHP24N65EF-GE3
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1,770
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Vishay Siliconix MOSFET N-CH 650V 24A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 650V 24A (Tc) 156 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2656pF @ 100V 10V ±20V
SIHG24N65EF-GE3
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2,883
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Vishay Siliconix MOSFET N-CH 650V 24A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel - 650V 24A (Tc) 156 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2774pF @ 100V 10V ±30V
SIHB24N65EF-GE3
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3,835
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Vishay Siliconix MOSFET N-CH 650V 24A D2PAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 250W (Tc) N-Channel - 650V 24A (Tc) 156 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2774pF @ 100V 10V ±30V
SIHA24N65EF-E3
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1,146
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Vishay Siliconix MOSFET N-CHANNEL 650V 24A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 39W (Tc) N-Channel - 650V 24A (Tc) 156 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2774pF @ 100V 10V ±30V