Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHG35N60E-GE3
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1,976
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Vishay Siliconix MOSFET N-CH 600V 32A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel - 600V 32A (Tc) 94 mOhm @ 17A, 10V 4V @ 250µA 132nC @ 10V 2760pF @ 100V 10V ±30V
SIHB35N60E-GE3
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2,367
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Vishay Siliconix MOSFET N-CH 600V 32A D2PAK TO263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 250W (Tc) N-Channel - 650V 32A (Tc) 94 mOhm @ 17A, 10V 4V @ 250µA 132nC @ 10V 2760pF @ 100V 10V ±30V
SIHP35N60E-GE3
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3,896
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Vishay Siliconix MOSFET N-CH 600V 32A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 600V 32A (Tc) 94 mOhm @ 17A, 10V 4V @ 250µA 132nC @ 10V 2760pF @ 100V 10V ±30V
SIHF35N60E-GE3
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3,330
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Vishay Siliconix MOSFET N-CHANNEL 600V 32A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 39W (Tc) N-Channel - 600V 32A (Tc) 94 mOhm @ 17A, 10V 4V @ 250µA 132nC @ 10V 2760pF @ 100V 10V ±30V