Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 1.4A ES6 U-MOSII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) P-Channel 30V 1.4A (Ta) 251 mOhm @ 650mA, 10V 2.6V @ 1mA - 137pF @ 15V 4V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 1.4A ES6 U-MOSII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) P-Channel 30V 1.4A (Ta) 251 mOhm @ 650mA, 10V 2.6V @ 1mA - 137pF @ 15V 4V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 1.4A ES6 U-MOSII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) P-Channel 30V 1.4A (Ta) 251 mOhm @ 650mA, 10V 2.6V @ 1mA - 137pF @ 15V 4V, 10V ±20V