Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQNL2N50BBU
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1,498
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ON Semiconductor MOSFET N-CH 500V 0.35A TO-92L QFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body TO-92L 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
FQNL2N50BTA
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1,612
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ON Semiconductor MOSFET N-CH 500V 0.35A TO-92-3 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92-3 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
FQNL2N50BTA
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3,075
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ON Semiconductor MOSFET N-CH 500V 0.35A TO-92-3 QFET® Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92-3 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V