Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET P-CHANNEL 12V 4.8A ES6 U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount SOT-563, SOT-666 ES6 700mW (Ta) P-Channel - 12V 4.8A (Ta) 32 mOhm @ 3.5A, 4.5V 1V @ 1mA 12.7nC @ 4.5V 1040pF @ 12V 1.5V, 4.5V ±8V
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Toshiba Semiconductor and Storage MOSFET P-CHANNEL 12V 4.8A ES6 U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount SOT-563, SOT-666 ES6 700mW (Ta) P-Channel - 12V 4.8A (Ta) 32 mOhm @ 3.5A, 4.5V 1V @ 1mA 12.7nC @ 4.5V 1040pF @ 12V 1.5V, 4.5V ±8V
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Toshiba Semiconductor and Storage MOSFET P-CHANNEL 12V 4.8A ES6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount SOT-563, SOT-666 ES6 700mW (Ta) P-Channel - 12V 4.8A (Ta) 32 mOhm @ 3.5A, 4.5V 1V @ 1mA 12.7nC @ 4.5V 1040pF @ 12V 1.5V, 4.5V ±8V