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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TSM80N1R2CP ROG	RFQ VIEW	PDF RFQ	1,366 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 5.5A TO252		-	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	110W (Tc)	N-Channel	800V	5.5A (Tc)	1.2 Ohm @ 2.75A, 10V	4V @ 250µA	19.4nC @ 10V	685pF @ 100V	10V	±30V
	TSM80N1R2CP ROG	RFQ VIEW	PDF RFQ	1,612 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 5.5A TO252		-	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	110W (Tc)	N-Channel	800V	5.5A (Tc)	1.2 Ohm @ 2.75A, 10V	4V @ 250µA	19.4nC @ 10V	685pF @ 100V	10V	±30V
	TSM80N1R2CP ROG	RFQ VIEW	PDF RFQ	1,519 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 5.5A TO252		-	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	110W (Tc)	N-Channel	800V	5.5A (Tc)	1.2 Ohm @ 2.75A, 10V	4V @ 250µA	19.4nC @ 10V	685pF @ 100V	10V	±30V
	TSM80N1R2CH C5G	RFQ VIEW	PDF RFQ	1,296 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 5.5A TO251		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251 (IPAK)	110W (Tc)	N-Channel	800V	5.5A (Tc)	1.2 Ohm @ 2.75A, 10V	4V @ 250µA	19.4nC @ 10V	685pF @ 100V	10V	±30V

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