Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STF9HN65M2
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1,430
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STMicroelectronics MOSFET N-CH 650V 5.5A TO-220FP MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V
STD9HN65M2
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2,585
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STMicroelectronics MOSFET N-CH 650V 5.5A DPAK MDmesh™ M2 Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V
STD9HN65M2
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641
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STMicroelectronics MOSFET N-CH 650V 5.5A DPAK MDmesh™ M2 Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V
STD9HN65M2
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2,770
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STMicroelectronics MOSFET N-CH 650V 5.5A DPAK MDmesh™ M2 Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V
STU9HN65M2
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2,317
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STMicroelectronics MOSFET N-CH 650V 5.5A IPAK MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V