- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,116
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 30V 205A 8PDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 104W (Tc) | N-Channel | - | 30V | 205A (Tc) | 1.5 mOhm @ 32A, 10V | 2.5V @ 250µA | 67nC @ 10V | 4243pF @ 15V | 4.5V, 10V | ±30V | |||
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VIEW |
920
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 30V 205A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 104W (Tc) | N-Channel | - | 30V | 205A (Tc) | 1.5 mOhm @ 32A, 10V | 2.5V @ 250µA | 67nC @ 10V | 4243pF @ 15V | 4.5V, 10V | ±30V | |||
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VIEW |
3,356
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 30V 205A 8PDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 104W (Tc) | N-Channel | - | 30V | 205A (Tc) | 1.5 mOhm @ 32A, 10V | 2.5V @ 250µA | 67nC @ 10V | 4243pF @ 15V | 4.5V, 10V | ±30V | |||
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VIEW |
963
In-stock
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Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 34A (Ta), 192A (Tc) | 1.5 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,682
In-stock
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Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 34A (Ta), 192A (Tc) | 1.5 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,400
In-stock
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Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 34A (Ta), 192A (Tc) | 1.5 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | |||
