- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,347
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
|
|
VIEW |
1,709
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
|
|
VIEW |
733
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
|
VIEW |
1,357
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 200V SO8L | Automotive, AEC-Q101, TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | P-Channel | - | 200V | 12A (Tc) | 213 mOhm @ 1A, 4V | 3.5V @ 250µA | 160nC @ 10V | 4355pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
2,515
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 200V SO8L | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | P-Channel | - | 200V | 12A (Tc) | 213 mOhm @ 1A, 4V | 3.5V @ 250µA | 160nC @ 10V | 4355pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
2,406
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 200V SO8L | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | P-Channel | - | 200V | 12A (Tc) | 213 mOhm @ 1A, 4V | 3.5V @ 250µA | 160nC @ 10V | 4355pF @ 25V | 6V, 10V | ±20V | |||
