Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPW4R50ANH,L1Q
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 92A 8DSOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-DSOP Advance 800mW (Ta), 142W (Tc) N-Channel - 100V 92A (Tc) 4.5 mOhm @ 46A, 10V 4V @ 1mA 58nC @ 10V 5200pF @ 50V 10V ±20V
TPW4R50ANH,L1Q
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 92A 8DSOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-DSOP Advance 800mW (Ta), 142W (Tc) N-Channel - 100V 92A (Tc) 4.5 mOhm @ 46A, 10V 4V @ 1mA 58nC @ 10V 5200pF @ 50V 10V ±20V
TPW4R50ANH,L1Q
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1,666
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 92A 8DSOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-DSOP Advance 800mW (Ta), 142W (Tc) N-Channel - 100V 92A (Tc) 4.5 mOhm @ 46A, 10V 4V @ 1mA 58nC @ 10V 5200pF @ 50V 10V ±20V