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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,868
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SO | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.2A (Ta) | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 10V, 20V | ±25V | |||
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VIEW |
3,712
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.2A (Ta) | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 10V, 20V | ±25V | |||
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VIEW |
2,403
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.2A (Ta) | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 10V, 20V | ±25V | |||
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VIEW |
2,773
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.2A (Ta) | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 10V, 20V | ±25V | |||
