Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLML2502TR
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RFQ
3,664
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Infineon Technologies MOSFET N-CH 20V 4.2A SOT-23 HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 20V 4.2A (Ta) 45 mOhm @ 4.2A, 4.5V 1.2V @ 250µA 12nC @ 5V 740pF @ 15V 2.7V, 4.5V ±12V
IRLML2502TRPBF
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RFQ
2,771
In-stock
Infineon Technologies MOSFET N-CH 20V 4.2A SOT-23 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 20V 4.2A (Ta) 45 mOhm @ 4.2A, 4.5V 1.2V @ 250µA 12nC @ 5V 740pF @ 15V 2.5V, 4.5V ±12V
IRLML2502TRPBF
RFQ
VIEW
RFQ
1,172
In-stock
Infineon Technologies MOSFET N-CH 20V 4.2A SOT-23 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 20V 4.2A (Ta) 45 mOhm @ 4.2A, 4.5V 1.2V @ 250µA 12nC @ 5V 740pF @ 15V 2.5V, 4.5V ±12V
IRLML2502TRPBF
RFQ
VIEW
RFQ
1,410
In-stock
Infineon Technologies MOSFET N-CH 20V 4.2A SOT-23 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) N-Channel - 20V 4.2A (Ta) 45 mOhm @ 4.2A, 4.5V 1.2V @ 250µA 12nC @ 5V 740pF @ 15V 2.5V, 4.5V ±12V