Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SUP85N03-3M6P-GE3
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Vishay Siliconix MOSFET N-CH 30V 85A TO220AB TrenchFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.1W (Ta), 78.1W (Tc) N-Channel 30V 85A (Tc) 3.6 mOhm @ 22A, 10V 2.5V @ 250µA 100nC @ 10V 3535pF @ 15V 4.5V, 10V ±20V
TSM036N03PQ56 RLG
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3,259
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 124A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 30V 124A (Tc) 3.6 mOhm @ 22A, 10V 2.5V @ 250µA 50nC @ 10V 2530pF @ 15V 4.5V, 10V ±20V
TSM036N03PQ56 RLG
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1,297
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 124A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 30V 124A (Tc) 3.6 mOhm @ 22A, 10V 2.5V @ 250µA 50nC @ 10V 2530pF @ 15V 4.5V, 10V ±20V
TSM036N03PQ56 RLG
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3,318
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 124A 8PDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 30V 124A (Tc) 3.6 mOhm @ 22A, 10V 2.5V @ 250µA 50nC @ 10V 2530pF @ 15V 4.5V, 10V ±20V