Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH24N60X
RFQ
VIEW
RFQ
2,054
In-stock
IXYS MOSFET N-CH 600V 24A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 400W (Tc) N-Channel - 600V 24A (Tc) 175 mOhm @ 12A, 10V 4.5V @ 2.5mA 47nC @ 10V 1910pF @ 25V 10V ±30V
IXFQ24N60X
RFQ
VIEW
RFQ
3,373
In-stock
IXYS MOSFET N-CH 600V 24A TO-3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 400W (Tc) N-Channel - 600V 24A (Tc) 175 mOhm @ 12A, 10V 4.5V @ 2.5mA 47nC @ 10V 1910pF @ 25V 10V ±30V
IXFA24N60X
RFQ
VIEW
RFQ
921
In-stock
IXYS MOSFET N-CH 600V 24A TO-263 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AA 400W (Tc) N-Channel - 600V 24A (Tc) 175 mOhm @ 12A, 10V 4.5V @ 2.5mA 47nC @ 10V 1910pF @ 25V 10V ±30V
IXFP24N60X
RFQ
VIEW
RFQ
1,734
In-stock
IXYS MOSFET N-CH 600V 24A TO220 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 400W (Tc) N-Channel - 600V 24A (Tc) 175 mOhm @ 12A, 10V 4.5V @ 2.5mA 47nC @ 10V 1910pF @ 25V 10V ±30V
FDP24N40
RFQ
VIEW
RFQ
2,741
In-stock
ON Semiconductor MOSFET N-CH 400V 24A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 227W (Tc) N-Channel - 400V 24A (Tc) 175 mOhm @ 12A, 10V 5V @ 250µA 60nC @ 10V 3020pF @ 25V 10V ±30V