Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQPF13N50T
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ON Semiconductor MOSFET N-CH 500V 12.5A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 56W (Tc) N-Channel - 500V 12.5A (Tc) 430 mOhm @ 6.25A, 10V 5V @ 250µA 60nC @ 10V 2300pF @ 25V 10V ±30V
FQPF13N50
RFQ
VIEW
RFQ
2,934
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ON Semiconductor MOSFET N-CH 500V 12.5A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 56W (Tc) N-Channel - 500V 12.5A (Tc) 430 mOhm @ 6.25A, 10V 5V @ 250µA 60nC @ 10V 2300pF @ 25V 10V ±30V
FQP13N50
RFQ
VIEW
RFQ
3,299
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ON Semiconductor MOSFET N-CH 500V 12.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 500V 12.5A (Tc) 430 mOhm @ 6.25A, 10V 5V @ 250µA 60nC @ 10V 2300pF @ 25V 10V ±30V