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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRF5210S	RFQ VIEW	PDF RFQ	1,242 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	IRF5210STRRPBF	RFQ VIEW	PDF RFQ	634 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Not For New Designs	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	AUIRF5210STRL	RFQ VIEW	PDF RFQ	966 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	AUIRF5210STRL	RFQ VIEW	PDF RFQ	1,533 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	AUIRF5210STRL	RFQ VIEW	PDF RFQ	2,879 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	IRF5210SPBF	RFQ VIEW	PDF RFQ	3,861 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	IRF5210STRLPBF	RFQ VIEW	PDF RFQ	2,450 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	IRF5210STRLPBF	RFQ VIEW	PDF RFQ	3,573 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	IRF5210STRLPBF	RFQ VIEW	PDF RFQ	1,539 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V
	IRF5210LPBF	RFQ VIEW	PDF RFQ	2,492 In-stock	Infineon Technologies	MOSFET P-CH 100V 38A TO-262		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.1W (Ta), 170W (Tc)	P-Channel	-	100V	38A (Tc)	60 mOhm @ 38A, 10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	10V	±20V

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