Transistors - FETs, MOSFETs - Single Products For Sale - PDF

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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK16A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	958 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 16A TO-220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	-	N-Channel	-	550V	16A (Ta)	330 mOhm @ 8A, 10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	-	-
	IXTH450P2	RFQ VIEW	PDF RFQ	1,328 In-stock	IXYS	MOSFET N-CH 500V 16A TO247	PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	-	500V	16A (Tc)	330 mOhm @ 8A, 10V	4.5V @ 250µA	43nC @ 10V	2530pF @ 25V	10V	±30V
	IXTQ450P2	RFQ VIEW	PDF RFQ	733 In-stock	IXYS	MOSFET N-CH 500V 16A TO3P	PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	300W (Tc)	N-Channel	-	500V	16A (Tc)	330 mOhm @ 8A, 10V	4.5V @ 250µA	43nC @ 10V	2530pF @ 25V	10V	±30V
	IXTP450P2	RFQ VIEW	PDF RFQ	3,981 In-stock	IXYS	MOSFET N-CH 500V 16A TO220AB	PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	500V	16A (Tc)	330 mOhm @ 8A, 10V	4.5V @ 250µA	43nC @ 10V	2530pF @ 25V	10V	±30V

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