Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CH 20V 50A 10-POLARPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.4 mOhm @ 18.3A, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CH 20V 50A POLARPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.4 mOhm @ 18.3A, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CH 20V 50A POLARPAK TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.4 mOhm @ 18.3A, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V 4.5V, 10V ±20V
SIE822DF-T1-GE3
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Vishay Siliconix MOSFET N-CH 20V 50A POLARPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.4 mOhm @ 18.3A, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V 4.5V, 10V ±20V