Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP2M020A060N
RFQ
VIEW
RFQ
3,103
In-stock
Global Power Technologies Group MOSFET N-CH 600V 20A TO3PN - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 347W (Tc) N-Channel - 600V 20A (Tc) 330 mOhm @ 10A, 10V 5V @ 250µA 70nC @ 10V 3184pF @ 25V 10V ±30V
GP1M020A060N
RFQ
VIEW
RFQ
1,394
In-stock
Global Power Technologies Group MOSFET N-CH 600V 20A TO3PN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 347W (Tc) N-Channel - 600V 20A (Tc) 330 mOhm @ 10A, 10V 4V @ 250µA 76nC @ 10V 2097pF @ 25V 10V ±30V
GP1M020A060M
RFQ
VIEW
RFQ
3,022
In-stock
Global Power Technologies Group MOSFET N-CH 600V 20A TO3P - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 347W (Tc) N-Channel - 600V 20A (Tc) 330 mOhm @ 10A, 10V 4V @ 250µA 76nC @ 10V 2097pF @ 25V 10V ±30V
2SK3906(Q)
RFQ
VIEW
RFQ
1,873
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-3PN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel - 600V 20A (Ta) 330 mOhm @ 10A, 10V 4V @ 1mA 60nC @ 10V 4250pF @ 25V 10V ±30V
IXTT20N50D
RFQ
VIEW
RFQ
3,635
In-stock
IXYS MOSFET N-CH 500V 20A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 400W (Tc) N-Channel Depletion Mode 500V 20A (Tc) 330 mOhm @ 10A, 10V 3.5V @ 250mA 125nC @ 10V 2500pF @ 25V 10V ±30V
IXTH20N50D
RFQ
VIEW
RFQ
2,972
In-stock
IXYS MOSFET N-CH 500V 20A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 400W (Tc) N-Channel Depletion Mode 500V 20A (Tc) 330 mOhm @ 10A, 10V - 125nC @ 10V 2500pF @ 25V 10V ±30V