- Part Status :
- Technology :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,687
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
|
VIEW |
1,824
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 45A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 270W (Tc) | N-Channel | 1200V | 40A (Tc) | 100 mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | 20V | +25V, -10V | |||
|
VIEW |
3,366
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V 32A SOT227 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | 1200V | 32A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
|
VIEW |
2,719
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V 41A D3PAK | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 273W (Tc) | N-Channel | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
|
VIEW |
2,705
In-stock
|
Littelfuse Inc. | MOSFET SIC 1200V 25A TO-247-3L | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 179W (Tc) | N-Channel | 1200V | 39A (Tc) | 100 mOhm @ 20A, 20V | 4V @ 10mA | 95nC @ 20V | 1825pF @ 800V | 20V | +22V, -6V | |||
