Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STE48NM50
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STMicroelectronics MOSFET N-CH 550V 48A ISOTOP MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 450W (Tc) N-Channel - 550V 48A (Tc) 100 mOhm @ 24A, 10V 5V @ 250µA 117nC @ 10V 3700pF @ 25V 10V ±30V
IXFK48N50Q
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IXYS MOSFET N-CH 500V 48A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 500V 48A (Tc) 100 mOhm @ 24A, 10V 4V @ 4mA 190nC @ 10V 7000pF @ 25V 10V ±20V
IXFK48N50
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614
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IXYS MOSFET N-CH 500V 48A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 500V 48A (Tc) 100 mOhm @ 24A, 10V 4V @ 8mA 270nC @ 10V 8400pF @ 25V 10V ±20V
IXFX48N50Q
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2,063
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IXYS MOSFET N-CH 500V 48A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 500W (Tc) N-Channel - 500V 48A (Tc) 100 mOhm @ 24A, 10V 4V @ 4mA 190nC @ 10V 7000pF @ 25V 10V ±20V