Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TPH3208LD
RFQ
VIEW
RFQ
1,820
In-stock
Transphorm MOSFET N-CH 650V 20A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 4-PowerDFN PQFN (8x8) 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V
TPH3208LS
RFQ
VIEW
RFQ
2,021
In-stock
Transphorm MOSFET N-CH 650V 20A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 3-PowerDFN PQFN (8x8) 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V
TPH3208LDG
RFQ
VIEW
RFQ
2,695
In-stock
Transphorm MOSFET N-CH 650V 20A PQFN - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 3-PowerDFN PQFN (8x8) 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V
TPH3208PS
RFQ
VIEW
RFQ
1,441
In-stock
Transphorm MOSFET N-CH 650V 20A TO220 - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V