Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI7114DN-T1-GE3
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Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8 TrenchFET® Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) N-Channel 30V 11.7A (Ta) 7.5 mOhm @ 18.3A, 10V 3V @ 250µA 19nC @ 4.5V - 4.5V, 10V ±20V
SI7114DN-T1-GE3
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2,837
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Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) N-Channel 30V 11.7A (Ta) 7.5 mOhm @ 18.3A, 10V 3V @ 250µA 19nC @ 4.5V - 4.5V, 10V ±20V
SI7114DN-T1-E3
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2,114
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Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) N-Channel 30V 11.7A (Ta) 7.5 mOhm @ 18.3A, 10V 3V @ 250µA 19nC @ 4.5V - 4.5V, 10V ±20V
SI7114DN-T1-E3
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2,012
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Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) N-Channel 30V 11.7A (Ta) 7.5 mOhm @ 18.3A, 10V 3V @ 250µA 19nC @ 4.5V - 4.5V, 10V ±20V
SI7114DN-T1-E3
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RFQ
1,274
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Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) N-Channel 30V 11.7A (Ta) 7.5 mOhm @ 18.3A, 10V 3V @ 250µA 19nC @ 4.5V - 4.5V, 10V ±20V