Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH10P50
RFQ
VIEW
RFQ
1,461
In-stock
IXYS MOSFET P-CH 500V 10A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel - 500V 10A (Tc) 900 mOhm @ 5A, 10V 5V @ 250µA 160nC @ 10V 4700pF @ 25V 10V ±20V
IXTT10P50
RFQ
VIEW
RFQ
1,942
In-stock
IXYS MOSFET P-CH 500V 10A TO-268 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) P-Channel - 500V 10A (Tc) 900 mOhm @ 5A, 10V 5V @ 250µA 160nC @ 10V 4700pF @ 25V 10V ±20V
STW12NK95Z
RFQ
VIEW
RFQ
3,579
In-stock
STMicroelectronics MOSFET N-CH 950V 10A TO-247 SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 230W (Tc) N-Channel - 950V 10A (Tc) 900 mOhm @ 5A, 10V 4.5V @ 100µA 113nC @ 10V 3500pF @ 25V 10V ±30V