Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFB4115GPBF
RFQ
VIEW
RFQ
2,550
In-stock
Infineon Technologies MOSFET N-CH 150V 104A TO220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 150V 104A (Tc) 11 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 10V ±20V
IRFB4115PBF
RFQ
VIEW
RFQ
1,570
In-stock
Infineon Technologies MOSFET N-CH 150V 104A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 150V 104A (Tc) 11 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 10V ±20V