Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPD048N06L3GBTMA1
RFQ
VIEW
RFQ
3,218
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 115W (Tc) N-Channel - 60V 90A (Tc) 4.8 mOhm @ 90A, 10V 2.2V @ 58µA 50nC @ 4.5V 8400pF @ 30V 4.5V, 10V ±20V
IPD048N06L3GBTMA1
RFQ
VIEW
RFQ
3,679
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 115W (Tc) N-Channel - 60V 90A (Tc) 4.8 mOhm @ 90A, 10V 2.2V @ 58µA 50nC @ 4.5V 8400pF @ 30V 4.5V, 10V ±20V
IPD048N06L3GBTMA1
RFQ
VIEW
RFQ
1,899
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 115W (Tc) N-Channel - 60V 90A (Tc) 4.8 mOhm @ 90A, 10V 2.2V @ 58µA 50nC @ 4.5V 8400pF @ 30V 4.5V, 10V ±20V