Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDD4N60NZ
RFQ
VIEW
RFQ
1,435
In-stock
ON Semiconductor MOSFET N CH 600V 3.4A DPAK UniFET-II™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 114W (Tc) N-Channel - 600V 3.4A (Tc) 2.5 Ohm @ 1.7A, 10V 5V @ 250µA 10.8nC @ 10V 510pF @ 25V 10V ±25V
FDD4N60NZ
RFQ
VIEW
RFQ
1,436
In-stock
ON Semiconductor MOSFET N CH 600V 3.4A DPAK UniFET-II™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 114W (Tc) N-Channel - 600V 3.4A (Tc) 2.5 Ohm @ 1.7A, 10V 5V @ 250µA 10.8nC @ 10V 510pF @ 25V 10V ±25V
FDD4N60NZ
RFQ
VIEW
RFQ
3,864
In-stock
ON Semiconductor MOSFET N CH 600V 3.4A DPAK UniFET-II™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 114W (Tc) N-Channel - 600V 3.4A (Tc) 2.5 Ohm @ 1.7A, 10V 5V @ 250µA 10.8nC @ 10V 510pF @ 25V 10V ±25V